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This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
主要特性
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
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EDA Symbols, Footprints and 3D Models
STMicroelectronics - STD40P3LLH6
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
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样片和购买
| 产品型号 | 从分销商订购 | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度（ºC） | Country of Origin | Budgetary Price (US$)*/Qty | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | |||||||||||
| STD40P3LLH6 | 1 distributors | Buy Direct |
NRND
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EAR99 | NEC | Tape And Reel | DPAK | - | - | CHINA | 0.92 / 1k | |
