N-channel 600 V, 1.3 Ohm typ., 3.5 A MDmesh M2 Power MOSFET in DPAK package

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  • These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters.

    主要特性

    • Extremely low gate charge
    • Excellent output capacitance (COSS) profile
    • 100% avalanche tested
    • Zener-protected

样片和购买

产品型号
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STD5N60M2 DPAK Tape And Reel
Active
- - EAR99 CHINA 查看供货情况

Distributor availability ofSTD5N60M2

代理商名称
地区 库存 最小订购量 Third party link
ARROW EUROPE 2500 0 Order Now

代理商库存报告日期: 2019-08-08

代理商名称

ARROW

库存

2500

Min.Order

0

地区

EUROPE Order Now

代理商库存报告日期: 2019-08-08

STD5N60M2

封装

DPAK

包装类型

Tape And Reel

Unit Price (US$)

*

Distributor availability ofSTD5N60M2

代理商名称
地区 库存 最小订购量 Third party link
ARROW EUROPE 2500 0 Order Now

代理商库存报告日期: 2019-08-08

代理商名称

ARROW

库存

2500

Min.Order

0

地区

EUROPE Order Now

代理商库存报告日期: 2019-08-08

供货状态

Active

Unit Price (US$)

-

数量

-

ECCN (US)

EAR99

Country of Origin

CHINA

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors

Education

Product included in our Longevity Program.

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适合您的资源

开发工具硬件

    • 产品型号

      MOSFET product finder application for Android and iOS

00 选择要下载的文档

技术文档

    • Description 版本 文档大小 操作
      DS9958
      N-channel 600 V, 1.3 Ω typ., 3.5 A, MDmesh™ M2 Power MOSFETs in DPAK, TO-220 and IPAK packages
      5.0
      540.71 KB
      PDF
      DS9958

      N-channel 600 V, 1.3 Ω typ., 3.5 A, MDmesh™ M2 Power MOSFETs in DPAK, TO-220 and IPAK packages

    • Description 版本 文档大小 操作
      AN4250
      Fishbone diagram for power factor correction
      1.1
      772.32 KB
      PDF
      AN4829
      Fishbone diagrams for a forward converter
      1.1
      1.35 MB
      PDF
      AN4720
      Half bridge resonant LLC converters and primary side MOSFET selection
      1.0
      1.4 MB
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      AN4742
      MDmesh™ M2 EP: an additional improvement to MDmesh™ M2 ST Super-Junction Technology
      1.0
      1.29 MB
      PDF
      AN4406
      MDmesh™ M2: the new ST super-junction technology ideal for resonant topologies
      1.0
      652.78 KB
      PDF
      AN2842
      Paralleling of power MOSFETs in PFC topology
      1.4
      896.91 KB
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      AN2344
      Power MOSFET avalanche characteristics and ratings
      1.3
      880.04 KB
      PDF
      AN5318
      Super-junction power device evolution: characteristics analysis and performance comparison between MDmesh M2 and MDmesh M6 technologies
      1.0
      1.09 MB
      PDF
      AN4337
      The avalanche issue: comparing the impacts of the IAR and EAS parameters
      1.1
      347.01 KB
      PDF
      AN4250

      Fishbone diagram for power factor correction

      AN4829

      Fishbone diagrams for a forward converter

      AN4720

      Half bridge resonant LLC converters and primary side MOSFET selection

      AN4742

      MDmesh™ M2 EP: an additional improvement to MDmesh™ M2 ST Super-Junction Technology

      AN4406

      MDmesh™ M2: the new ST super-junction technology ideal for resonant topologies

      AN2842

      Paralleling of power MOSFETs in PFC topology

      AN2344

      Power MOSFET avalanche characteristics and ratings

      AN5318

      Super-junction power device evolution: characteristics analysis and performance comparison between MDmesh M2 and MDmesh M6 technologies

      AN4337

      The avalanche issue: comparing the impacts of the IAR and EAS parameters

    • Description 版本 文档大小 操作
      TN1156
      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products
      1.0
      657.71 KB
      PDF
      TN1156

      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products

    • Description 版本 文档大小 操作
      UM1575
      Spice model tutorial for Power MOSFETs
      1.3
      1.51 MB
      PDF
      UM1575

      Spice model tutorial for Power MOSFETs

硬件型号、CAD库及SVD

    • Description 版本 文档大小 操作
      STD5N60M2 Application Circuit 1.0
      13.85 KB
      ZIP
      STD5N60M2 Evaluation Circuit 1.0
      34.33 KB
      ZIP
      STD5N60M2 PSpice model 1.0
      10.27 KB
      ZIP

      STD5N60M2 Application Circuit

      STD5N60M2 Evaluation Circuit

      STD5N60M2 PSpice model

出版刊物和宣传资料

    • Description 版本 文档大小 操作
      500-650 V MDmesh™ M2: The New ST’s High Voltage Super-junction MOSFET Series 1.0
      720.83 KB
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      STPOWER™ Transistors in the 10 years longevity program 1.0
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      500-650 V MDmesh™ M2: The New ST’s High Voltage Super-junction MOSFET Series

      600-650 V MDmesh™ M2: The ST’s new Super-junction HV MOSFET series

      STPOWER™ Transistors in the 10 years longevity program

    • Description 版本 文档大小 操作
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产品型号 供货状态 封装 等级规格 符合RoHS级别 材料声明**
STD5N60M2
Active
DPAK 工业 Ecopack2

STD5N60M2

Package:

DPAK

Material Declaration**:

Marketing Status

Active

Package

DPAK

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.