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STD5N65M6

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N沟道650 V、1.15 Ohm典型值、4 A MDmesh M6功率MOSFET，DPAK封装

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产品概述

描述

The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) * area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.

  • 所有功能

    • Reduced switching losses
    • Lower RDS(on) x area vs previous generation
    • Low gate input resistance
    • 100% avalanche tested
    • Zener-protected
    阅读更多 阅读较少信息

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特别推荐

All tools & software

    • 产品型号
      		状态
      		描述
      		类型
      		供应商

      STPOWER MOSFET Finder

      批量生产

      用于安卓和iOS的MOSFET产品查找应用

      		 查找器App ST
      STPOWER MOSFET Finder

      描述:

      用于安卓和iOS的MOSFET产品查找应用

All resources

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Resource title
Latest update

产品规格 (1)

Resource title
Latest update
DS11603 N-channel 650 V, 1.15 Ω typ., 4 A MDmesh™ M6 Power MOSFET in a DPAK package 1.0
09 May 2016
09 May 2016
DS11603 N-channel 650 V, 1.15 Ω typ., 4 A MDmesh™ M6 Power MOSFET in a DPAK package 1.0

应用手册 (5)

Resource title
Latest update
AN4250 Fishbone diagram for power factor correction 1.1
13 Sep 2018
13 Sep 2018
AN4250 Fishbone diagram for power factor correction 1.1
AN2842 Paralleling of power MOSFETs in PFC topology 1.4
13 Sep 2018
13 Sep 2018
AN2842 Paralleling of power MOSFETs in PFC topology 1.4
AN2344 Power MOSFET avalanche characteristics and ratings 1.3
13 Sep 2018
13 Sep 2018
AN2344 Power MOSFET avalanche characteristics and ratings 1.3
AN5318 Super-junction power device evolution: characteristics analysis and performance comparison between MDmesh M2 and MDmesh M6 technologies 1.0
18 Apr 2019
18 Apr 2019
AN5318 Super-junction power device evolution: characteristics analysis and performance comparison between MDmesh M2 and MDmesh M6 technologies 1.0
AN4337 The avalanche issue: comparing the impacts of the IAR and EAS parameters 1.1
13 Sep 2018
13 Sep 2018
AN4337 The avalanche issue: comparing the impacts of the IAR and EAS parameters 1.1

技术文档 (1)

Resource title
Latest update
TN1156 Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products 1.0
13 Nov 2016
13 Nov 2016
TN1156 Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products 1.0

用户手册 (1)

Resource title
Latest update
UM1575 Spice model tutorial for Power MOSFETs 1.3
21 Oct 2016
21 Oct 2016
UM1575 Spice model tutorial for Power MOSFETs 1.3

宣传册 (5 of 6)

Resource title
Latest update
300-1200 V MDmesh 1.0
22 Feb 2021
22 Feb 2021
300-1200 V MDmesh 1.0
400/650 V MDmesh™ DM2 :STPOWER MOSFET series with fast-recovery body diode 1.1
05 Jun 2020
05 Jun 2020
400/650 V MDmesh™ DM2 :STPOWER MOSFET series with fast-recovery body diode 1.1
600 to 700 V MDmesh™ M6 High-voltage, SJ MOSFETs to boost the efficiency 1.0
03 Apr 2019
03 Apr 2019
600 to 700 V MDmesh™ M6 High-voltage, SJ MOSFETs to boost the efficiency 1.0
ST MOSFET Finder, the new app for Android and iOS 1.0
08 May 2020
08 May 2020
ST MOSFET Finder, the new app for Android and iOS 1.0
STPOWER MOSFET MDmesh™ M6 600 to 700 V Super Junction MOSFETs to boost the efficiency 1.0
03 Jun 2020
03 Jun 2020
STPOWER MOSFET MDmesh™ M6 600 to 700 V Super Junction MOSFETs to boost the efficiency 1.0
STPOWER MOSFETs in the innovative TO-LL The latest evolution in SMD power packages 1.0
06 Oct 2020
06 Oct 2020
STPOWER MOSFETs in the innovative TO-LL The latest evolution in SMD power packages 1.0
Load more

手册 (1)

Resource title
Latest update
TO-LL: the latest evolution in SMD power packages STPOWER MOSFET SJ MDmesh M6 and DM6 1.0
24 Jul 2020
24 Jul 2020
TO-LL: the latest evolution in SMD power packages STPOWER MOSFET SJ MDmesh M6 and DM6 1.0

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STD5N65M6

Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.

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Symbols

Footprints

Footprints

3D model

3D models

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Resource title
Latest update

SPICE models (1)

Resource title
Latest update
std5n65m6 Pspice Model 1.0
14 Apr 2019
14 Apr 2019
std5n65m6 Pspice Model 1.0

质量与可靠性

产品型号 Marketing Status 封装 等级规格 符合RoHS级别 材料声明**
STD5N65M6
批量生产
DPAK 工业 Ecopack2

STD5N65M6

Package:

DPAK

Material Declaration**:

More Info

Marketing Status

批量生产

Package

DPAK

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持 。

样片和购买

产品型号
从分销商订购
从ST订购
供货状态
ECCN (US)
ECCN (EU)
包装类型
封装
温度（ºC） Country of Origin
Budgetary Price (US$)*/Qty
最小值
最大值
STD5N65M6 无法联系到经销商，请联系我们的销售办事处
批量生产
EAR99 NEC Tape And Reel DPAK - - CHINA

STD5N65M6

供货状态

批量生产

ECCN (US)

EAR99
更多信息

Budgetary Price (US$)*/Qty

ECCN (EU)

NEC

包装类型

Tape And Reel

封装

DPAK

Operating Temperature (°C)

(最小值)

-

(最大值)

-

Budgetary Price (US$)* / Qty

Country of Origin

CHINA

(*) 建议转售单价（美元）仅用于预算用途。如需以当地货币计价的报价，请联系您当地的 ST销售办事处 或我们的 经销商 。

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