STD65N55F3

批量生产
Design Win

汽车级N沟道55 V、6.5 mΩ典型值、80 A STripFET F3功率MOSFET,DPAK封装

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产品概述

描述

This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics' unique \"Single Feature Size™\" strip-based process, which has decreased the critical alignment steps, offering remarkable manufacturing reproducibility. The outcome is a transistor with extremely high packing density for low onresistance, rugged avalanche characteristics and low gate charge.

EDA符号、封装和3D模型

STMicroelectronics - STD65N55F3

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Symbols

符号

Footprints

封装

3D model

3D模型

质量与可靠性

产品型号 Marketing Status 等级规格 符合RoHS级别 材料声明**
STD65N55F3
批量生产
DPAK 汽车应用 Ecopack1

STD65N55F3

Package:

DPAK

Material Declaration**:

PDF XML

Marketing Status

批量生产

Package

DPAK

Grade

Automotive

RoHS Compliance Grade

Ecopack1

(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此,它们可能不是100%适用于特定的设备。有关特定设备的信息,请联系 销售支持

样片和购买

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包装类型
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ECCN (US)
ECCN (EU)
STD65N55F3
Available at distributors

经销商的可用性 STD65N55F3

代理商名称
地区 库存 最小订购量 第三方链接

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STD65N55F3 批量生产

Budgetary Price (US$)*/Qty:
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包:
包装类型:
RoHS:
Country of Origin:
ECCN (US):
ECCN (EU):

产品型号:

STD65N55F3

代理商名称

代理商库存报告日期:

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(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商