概述
工具与软件
资源
解决方案
质量与可靠性
Sales Briefcase
eDesignSuite
开始
样片和购买
Partner products
  • This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.

    主要特性

    • Fast-recovery body diode
    • Extremely low gate charge and input capacitance
    • Low on-resistance
    • 100% avalanche tested
    • Extremely high dv/dt ruggedness
    • Zener-protected

样片和购买

产品型号
封装
包装类型
供货状态
预算价格(US$)
数量
ECCN (US)
Country of Origin
从分销商订购
从ST订购
STD6N60DM2 DPAK Tape And Reel
Active
- - EAR99 CHINA No availability of distributors reported, please contact our sales office

STD6N60DM2

封装

DPAK

包装类型

Tape And Reel

Unit Price (US$)

*

供货状态

Active

Unit Price (US$)

-

数量

-

ECCN (US)

EAR99

Country of Origin

CHINA

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors

精选 产品

适合您的资源

相关应用

家庭电器和专业电器

开发工具硬件

    • 产品型号

      MOSFET product finder application for Android and iOS

00 选择要下载的文档

技术文档

    • 描述 版本 文档大小 操作
      DS12202
      N-channel 600 V, 0.95 Ω typ., 5 A MDmesh™ DM2 Power MOSFET in a DPAK package
      2.0
      511 KB
      PDF
      DS12202

      N-channel 600 V, 0.95 Ω typ., 5 A MDmesh™ DM2 Power MOSFET in a DPAK package

    • 描述 版本 文档大小 操作
      AN4250
      Fishbone diagram for power factor correction
      1.1
      772.32 KB
      PDF
      AN4720
      Half bridge resonant LLC converters and primary side MOSFET selection
      1.0
      1.4 MB
      PDF
      AN2626
      MOSFET body diode recovery mechanism in a phase-shifted ZVS full bridge DC/DC converter
      1.4
      446.79 KB
      PDF
      AN2842
      Paralleling of power MOSFETs in PFC topology
      1.4
      896.91 KB
      PDF
      AN2344
      Power MOSFET avalanche characteristics and ratings
      1.3
      880.04 KB
      PDF
      AN4337
      The avalanche issue: comparing the impacts of the IAR and EAS parameters
      1.1
      347.01 KB
      PDF
      AN4250

      Fishbone diagram for power factor correction

      AN4720

      Half bridge resonant LLC converters and primary side MOSFET selection

      AN2626

      MOSFET body diode recovery mechanism in a phase-shifted ZVS full bridge DC/DC converter

      AN2842

      Paralleling of power MOSFETs in PFC topology

      AN2344

      Power MOSFET avalanche characteristics and ratings

      AN4337

      The avalanche issue: comparing the impacts of the IAR and EAS parameters

    • 描述 版本 文档大小 操作
      TN1156
      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products
      1.0
      657.71 KB
      PDF
      TN1156

      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products

    • 描述 版本 文档大小 操作
      UM1575
      Spice model tutorial for Power MOSFETs
      1.3
      1.51 MB
      PDF
      UM1575

      Spice model tutorial for Power MOSFETs

出版刊物和宣传资料

    • 描述 版本 文档大小 操作
      400/650 V MDmesh™ DM2: ST’s new MOSFET series with integrated fast-recovery body diode 1.0
      342.97 KB
      PDF

      400/650 V MDmesh™ DM2: ST’s new MOSFET series with integrated fast-recovery body diode

    • 描述 版本 文档大小 操作
      Electric vehicle (EV) ecosystem 1.1
      1.28 MB
      PDF

      Electric vehicle (EV) ecosystem

产品型号 供货状态 封装 等级规格 符合RoHS级别 材料声明**
STD6N60DM2
Active
DPAK 工业 Ecopack2

STD6N60DM2

Package:

DPAK

Material Declaration**:

Marketing Status

Active

Package

DPAK

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.