STD6N80K5

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产品概述

描述

这款超高压N-沟道功率MOSFETs 采用MDmesh™ K5技术进行设计。该技术以创新专有的垂直工艺为基础。因此，在要求高功率密度和高效率的应用中，导通电阻显著降低，并具有极低的栅极电荷。

所有功能
业界领先的低RDS（on）

业界出色的品质因数（FoM）

极低的栅极电荷

经过100％雪崩测试

稳压保护
阅读更多阅读较少信息

精选视频

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900 V MDmesh K5 MOSFETs

Industry’s first 900 V MOSFETs with on-state resistance below 100 mΩ

Watch the video (03:57)

800 V MDmesh K5 MOSFETs

Available in 10 different RDS(on) values and 9 packages

Watch the video (04:25)

600 V and 650 V MDmesh M2 MOSFET series

Ideal for resonant-type power supplies

Watch the video (02:29)

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	产品型号	状态	描述	类型	供应商
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