N-channel 650 V, 0.98 Ohm typ., 5 A MDmesh M2 Power MOSFET in a DPAK package

下载数据手册

Order a free sample and buy from our distributors

样片和购买
概述
工具与软件
资源
解决方案
质量与可靠性
Sales Briefcase
eDesignSuite
开始
样片和购买
Partner products
  • This device is an N-channel Power MOSFET developed using the MDmesh™ M2 technology. Thanks to the strip layout associated to an improved vertical structure, the device exhibits both low on-resistance and optimized switching characteristics. It is therefore suitable for the most demanding high efficiency converters.

    主要特性

    • Extremely low gate charge
    • Excellent output capacitance (Coss) profile
    • 100% avalanche tested
    • Zener-protected

样片和购买

产品型号
封装
包装类型
供货状态
预算价格(US$)
数量
ECCN (US)
Country of Origin
从分销商订购
从ST订购
STD7N65M2 DPAK Tape And Reel
批量生产
- - EAR99 CHINA 查看供货情况

Distributor availability ofSTD7N65M2

代理商名称
地区 库存 最小订购量 Third party link
MOUSER WORLDWIDE 2902 1 Order Now
Farnell Element14 EUROPE 1889 1 Order Now

代理商库存报告日期: 2019-10-10

代理商名称

MOUSER

库存

2902

Min.Order

1

地区

WORLDWIDE Order Now

Farnell Element14

库存

1889

Min.Order

1

地区

EUROPE Order Now

代理商库存报告日期: 2019-10-10

获取样片

STD7N65M2

封装

DPAK

包装类型

Tape And Reel

单价(US$)

*

Distributor availability ofSTD7N65M2

代理商名称
地区 库存 最小订购量 Third party link
MOUSER WORLDWIDE 2902 1 Order Now
Farnell Element14 EUROPE 1889 1 Order Now

代理商库存报告日期: 2019-10-10

代理商名称

MOUSER

库存

2902

Min.Order

1

地区

WORLDWIDE Order Now

Farnell Element14

库存

1889

Min.Order

1

地区

EUROPE Order Now

代理商库存报告日期: 2019-10-10

供货状态

批量生产

单价(US$)

-

数量

-

ECCN (US)

EAR99

Country of Origin

CHINA

(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商

精选 产品

适合您的资源

开发工具硬件

    • 产品型号

      MOSFET product finder application for Android and iOS

00 选择要下载的文档

技术文档

    • 描述 版本 文档大小 操作
      DS10530
      N-channel 650 V, 0.98 Ω typ., 5 A MDmesh™ M2 Power MOSFET in a DPAK package
      2.0
      1.03 MB
      PDF
      DS10530

      N-channel 650 V, 0.98 Ω typ., 5 A MDmesh™ M2 Power MOSFET in a DPAK package

    • 描述 版本 文档大小 操作
      AN4250
      Fishbone diagram for power factor correction
      1.1
      772.32 KB
      PDF
      AN4829
      Fishbone diagrams for a forward converter
      1.1
      1.35 MB
      PDF
      AN4720
      Half bridge resonant LLC converters and primary side MOSFET selection
      1.0
      1.4 MB
      PDF
      AN4742
      MDmesh™ M2 EP: an additional improvement to MDmesh™ M2 ST Super-Junction Technology
      1.0
      1.29 MB
      PDF
      AN4406
      MDmesh™ M2: the new ST super-junction technology ideal for resonant topologies
      1.0
      652.78 KB
      PDF
      AN2842
      Paralleling of power MOSFETs in PFC topology
      1.4
      896.91 KB
      PDF
      AN2344
      Power MOSFET avalanche characteristics and ratings
      1.3
      880.04 KB
      PDF
      AN5318
      Super-junction power device evolution: characteristics analysis and performance comparison between MDmesh M2 and MDmesh M6 technologies
      1.0
      1.09 MB
      PDF
      AN4337
      The avalanche issue: comparing the impacts of the IAR and EAS parameters
      1.1
      347.01 KB
      PDF
      AN4250

      Fishbone diagram for power factor correction

      AN4829

      Fishbone diagrams for a forward converter

      AN4720

      Half bridge resonant LLC converters and primary side MOSFET selection

      AN4742

      MDmesh™ M2 EP: an additional improvement to MDmesh™ M2 ST Super-Junction Technology

      AN4406

      MDmesh™ M2: the new ST super-junction technology ideal for resonant topologies

      AN2842

      Paralleling of power MOSFETs in PFC topology

      AN2344

      Power MOSFET avalanche characteristics and ratings

      AN5318

      Super-junction power device evolution: characteristics analysis and performance comparison between MDmesh M2 and MDmesh M6 technologies

      AN4337

      The avalanche issue: comparing the impacts of the IAR and EAS parameters

    • 描述 版本 文档大小 操作
      TN1156
      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products
      1.0
      657.71 KB
      PDF
      TN1156

      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products

    • 描述 版本 文档大小 操作
      UM1575
      Spice model tutorial for Power MOSFETs
      1.3
      1.51 MB
      PDF
      UM1575

      Spice model tutorial for Power MOSFETs

硬件型号、CAD库及SVD

    • 描述 版本 文档大小 操作
      STD7N65M2 PSpice model 1.0
      9.49 KB
      ZIP

      STD7N65M2 PSpice model

出版刊物和宣传资料

    • 描述 版本 文档大小 操作
      500/650 V MDmesh™ M2 1.0
      1.03 MB
      PDF
      600/650 V MDmesh™ M2 1.0
      788.16 KB
      PDF

      500/650 V MDmesh™ M2

      600/650 V MDmesh™ M2

    • 描述 版本 文档大小 操作
      Electric vehicle (EV) ecosystem 1.1
      1.28 MB
      PDF

      Electric vehicle (EV) ecosystem

产品型号 供货状态 封装 等级规格 符合RoHS级别 材料声明**
STD7N65M2
批量生产
DPAK 工业 Ecopack2

STD7N65M2

Package:

DPAK

Material Declaration**:

PDF XML

Marketing Status

批量生产

Package

DPAK

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.