产品概述
描述
This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters.-
所有功能
- Extremely high dv/dt capability
- Very low intrinsic capacitance
- Gate charge minimized
精选 视频
Learn how ST’s low-voltage power MOSFETs can help you to solve your EMI/EMC issues in motor control applications
Industry’s first 900 V MOSFETs with on-state resistance below 100 mΩ
All tools & software
All resources
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产品规格 (1)
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| 12 Feb 2019 |
12 Feb 2019
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应用手册 (4)
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| 13 Sep 2018 |
13 Sep 2018
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用户手册 (1)
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| 21 Oct 2016 |
21 Oct 2016
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宣传册 (5)
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| 08 May 2020 |
08 May 2020
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| 13 Jun 2019 |
13 Jun 2019
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EDA Symbols, Footprints and 3D Models
STMicroelectronics - STD7NS20T4
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Symbols
Footprints
3D models
质量与可靠性
| 产品型号 | Marketing Status | 封装 | 等级规格 | 符合RoHS级别 | 材料声明** |
|---|---|---|---|---|---|
| STD7NS20T4 |
批量生产
|
DPAK | 工业 | Ecopack1 (*) |
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STD7NS20T4
Package:
DPAKMaterial Declaration**:
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持 。
样片和购买
| 产品型号 | 从分销商订购 | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度（ºC） | Country of Origin | Budgetary Price (US$)*/Qty | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | |||||||||||
| STD7NS20T4 | 3 distributors | Free Sample Buy Direct |
批量生产
|
EAR99 | NEC | Tape And Reel | DPAK | -55 | 150 | CHINA | ||
