产品概述
描述
This very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on 20 years STMicroelectronics experience on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency.
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所有功能
- Worldwide best RDS(on) x area
- Worldwide best FOM (figure of merit)
- Ultra low gate charge
- 100% avalanche tested
- Zener-protected
EDA符号、封装和3D模型
全部资源
资源标题 | 版本 | 更新时间 |
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SPICE models (1)
资源标题 | 版本 | 更新时间 | ||
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ZIP | 1.0 | 27 Sep 2022 | 27 Sep 2022 |
样片和购买
产品型号 | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | 封装 | 包装类型 | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | 温度(ºC) | Operating Temperature (°C) (min) | ||
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最小值 | 最大值 | |||||||||||||
STD80N450K6 | | | distributors 无法联系到经销商,请联系我们的销售办事处 | DPAK | Tape and Reel | CHINA | EAR99 | NEC | - | - | - |
STD80N450K6 批量生产