产品概述
描述
This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.-
所有功能
- AEC-Q101 qualified
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
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产品规格 (1)
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30 May 2017 | 30 May 2017 |
应用手册 (5)
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25 Oct 2016 | 25 Oct 2016 | |||
13 Sep 2018 | 13 Sep 2018 | |||
07 Jan 2019 | 07 Jan 2019 | |||
17 Mar 2021 | 17 Mar 2021 | |||
13 Sep 2018 | 13 Sep 2018 |
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21 Oct 2016 | 21 Oct 2016 |
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26 Mar 2021 | 26 Mar 2021 | |||
25 Sep 2019 | 25 Sep 2019 | |||
08 May 2020 | 08 May 2020 | |||
13 Jun 2019 | 13 Jun 2019 |
EDA Symbols, Footprints and 3D Models
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SPICE models (1)
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ZIP | 11 Dec 2020 | 11 Dec 2020 |