STD80N6F6

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产品概述

描述

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low R_DS(on) in all packages.

所有功能
AEC-Q101 qualified

Very low on-resistance

Very low gate charge

High avalanche ruggedness

Low gate drive power loss
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LV Motor Control

Learn how ST’s low-voltage power MOSFETs can help you to solve your EMI/EMC issues in motor control applications

Watch the video (18:18)

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	产品型号	状态	描述	类型	供应商
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