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This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™ H5 technology. The device has been optimized to achieve very low on-state resistance, contributing to a FoM that is among the best in its class.
主要特性
- Designed for automotive applications and AEC-Q101 qualified
- Low on-resistance RDS(on)
- High avalanche ruggedness
- Low gate drive power losses
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产品规格 (1)
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| 14 May 2015 |
14 May 2015
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应用手册 (5 of 6)
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用户手册 (1)
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| 21 Oct 2016 |
21 Oct 2016
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宣传册 (1)
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| 08 May 2020 |
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EDA Symbols, Footprints and 3D Models
STMicroelectronics - STD86N3LH5
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样片和购买
| 产品型号 | 从分销商订购 | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度（ºC） | Country of Origin | Budgetary Price (US$)*/Qty | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | |||||||||||
| STD86N3LH5 | 4 distributors |
批量生产
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EAR99 | NEC | Tape And Reel | DPAK | - | - | CHINA | |||
供货状态
批量生产ECCN (US)
EAR99Budgetary Price (US$)*/Qty
