STF10NM60ND

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N-channel 600 V, 570 mOhm typ., 8 A, FDmesh II Power MOSFET in a TO-220FP package

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产品概述

描述

This FDmesh II Power MOSFET with fast-recovery body diode is produced using MDmesh II technology. Utilizing a new strip-layout vertical structure, this device features low on-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters.

  • 所有功能

    • Fast-recovery body diode
    • Low gate charge and input capacitance
    • Low on-resistance RDS(on)
    • 100% avalanche tested
    • High dv/dt ruggedness

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STMicroelectronics - STF10NM60ND

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