Product overview
描述
These devices are P-channel Power MOSFETs developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFETs exhibit very low RDS(on) in all packages.-
All features
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
精选 视频
Industry’s first 900 V MOSFETs with on-state resistance below 100 mΩ
Available in 10 different RDS(on) values and 9 packages
All tools & software
All resources
| Resource title | Latest update |
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产品规格 (1)
| Resource title | Latest update | |||
|---|---|---|---|---|
| 13 Oct 2016 |
13 Oct 2016
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应用手册 (1)
| Resource title | Latest update | |||
|---|---|---|---|---|
| 13 Sep 2018 |
13 Sep 2018
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用户手册 (1)
| Resource title | Latest update | |||
|---|---|---|---|---|
| 21 Oct 2016 |
21 Oct 2016
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宣传册 (1)
| Resource title | Latest update | |||
|---|---|---|---|---|
| 08 May 2020 |
08 May 2020
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EDA Symbols, Footprints and 3D Models
STMicroelectronics - STF10P6F6
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Symbols
Footprints
3D models
All resources
| Resource title | Latest update |
|---|
硬件型号、CAD库及SVD (1)
| Resource title | Latest update | |||
|---|---|---|---|---|
| ZIP | 27 Aug 2015 |
27 Aug 2015
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样片和购买
| 产品型号 | 从分销商订购 | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度（ºC） | Country of Origin | Budgetary Price (US$)*/Qty | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | |||||||||||
| STF10P6F6 | 2 distributors |
NRND
|
EAR99 | NEC | Tube | TO-220FP | - | - | CHINA | 0.88 / 1k | ||
供货状态
NRNDECCN (US)
EAR99Budgetary Price (US$)*/Qty
0.88 / 1k