STF12NK65Z

NRND

N沟道650 V、0.57 Ohm、10 A功率MOSFET,TO-220FP封装

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概述
样片和购买
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工具与软件
质量与可靠性
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  • This high voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.

    主要特性

    • Extremely high dv/dt capability
    • 100% avalanche tested
    • Gate charge minimized
    • Zener-protected

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技术文档

    • 描述 版本 文档大小 操作
      DS6983
      N-channel 650 V, 0.6 Ω typ., 10 A SuperMESH™ Power MOSFET in a TO-220FP package
      3.0
      683.12 KB
      PDF
      DS6983

      N-channel 650 V, 0.6 Ω typ., 10 A SuperMESH™ Power MOSFET in a TO-220FP package

    • 描述 版本 文档大小 操作
      AN4250
      Fishbone diagram for power factor correction
      1.1
      772.32 KB
      PDF
      AN2842
      Paralleling of power MOSFETs in PFC topology
      1.4
      896.91 KB
      PDF
      AN2344
      Power MOSFET avalanche characteristics and ratings
      1.3
      880.04 KB
      PDF
      AN4337
      The avalanche issue: comparing the impacts of the IAR and EAS parameters
      1.1
      347.01 KB
      PDF
      AN4250

      Fishbone diagram for power factor correction

      AN2842

      Paralleling of power MOSFETs in PFC topology

      AN2344

      Power MOSFET avalanche characteristics and ratings

      AN4337

      The avalanche issue: comparing the impacts of the IAR and EAS parameters

    • 描述 版本 文档大小 操作
      TN1156
      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products
      1.0
      657.71 KB
      PDF
      TN1156

      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products

    • 描述 版本 文档大小 操作
      UM1575
      Spice model tutorial for Power MOSFETs
      1.3
      1.51 MB
      PDF
      UM1575

      Spice model tutorial for Power MOSFETs

出版刊物和宣传资料

    • 描述 版本 文档大小 操作
      300-1200 V MDmesh:The most complete SJ MOSFETs offer for (H)EV power solutions 1.0
      568.16 KB
      PDF
      400/650 V MDmesh™ DM2 :STPOWER MOSFET series with fast-recovery body diode 1.1
      203.54 KB
      PDF
      ST MOSFET Finder, the new app for Android and iOS 1.0
      305.22 KB
      PDF

      300-1200 V MDmesh:The most complete SJ MOSFETs offer for (H)EV power solutions

      400/650 V MDmesh™ DM2 :STPOWER MOSFET series with fast-recovery body diode

      ST MOSFET Finder, the new app for Android and iOS

质量与可靠性

产品型号 供货状态 封装 等级规格 符合RoHS级别 材料声明**
STF12NK65Z
NRND
TO-220FP Industrial Ecopack2

STF12NK65Z

Package:

TO-220FP

Material Declaration**:

PDF XML

Marketing Status

NRND

Package

TO-220FP

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此,它们可能不是100%适用于特定的设备。有关特定设备的信息,请联系 销售支持

样片和购买

产品型号
从分销商订购
从ST订购
封装
包装类型
供货状态
ECCN (US)
Country of Origin
Budgetary Price (US$)*/Qty
STF12NK65Z 没有经销商,请联系我们的销售办事处 TO-220FP Tube
NRND
EAR99 CHINA

STF12NK65Z

封装

TO-220FP

包装类型

Tube

Budgetary Price (US$)*/Qty

供货状态

NRND

Budgetary Price (US$)* / Qty

ECCN (US)

EAR99

Country of Origin

CHINA

(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商