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These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters.
主要特性
- Extremely low gate charge
- Lower RDS(on)x area vs previous generation
- Low gate input resistance
- 100% avalanche tested
- Zener-protected
精选 视频
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产品规格 (1)
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手册 (1)
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EDA Symbols, Footprints and 3D Models
样片和购买
产品型号 | 从分销商订购 | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度(ºC) | Country of Origin | Budgetary Price (US$)*/Qty | ||
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STF13N60M2 | 6 distributors | Free Sample Buy Direct |
批量生产
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EAR99 | NEC | Tube | TO-220FP | - | - | CHINA |