STF15N65M5

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Design Win

N沟道650 V、0.308 Ohm典型值、11 A MDmesh M5功率MOSFET,TO-220FP封装

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产品概述

描述

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.

  • 所有功能

    • Worldwide best RDS(on) * area
    • Higher VDSSrating and high dv/dt capability
    • Excellent switching performance
    • 100% avalanche tested

EDA符号、封装和3D模型

STMicroelectronics - STF15N65M5

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