产品概述
描述
These N-channel Power MOSFETs are developed using STMicroelectronics’ revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST’s proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.
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所有功能
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
特别推荐
EDA符号、封装和3D模型
STMicroelectronics - STF18NM80
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符号
封装
3D模型
样片和购买
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| 产品型号 | Order from distributors | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度（ºC） | Country of Origin | Budgetary Price (US$)*/Qty | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | |||||||||||
| STF18NM80 | distributors 无法联系到经销商，请联系我们的销售办事处 | 批量生产 | EAR99 | NEC | Tube | TO-220FP | - | - | CHINA | | ||
distributors
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