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These devices are N-channel Power MOSFETs developed using SuperMESH™ 5 technology. This revolutionary, avalanche-rugged, high voltage Power MOSFET technology is based on an innovative proprietary vertical structure. The result is a drastic reduction in on-resistance and ultra low gate charge for applications which require superior power density and high efficiency.
主要特性
- Industry’s lowest RDS(on) * area
- Industry's best figure of merit (FoM)
- Ultra low gate charge
- 100% avalanche tested
- Zener-protected
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产品规格 (1)
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应用手册 (4)
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手册 (1)
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23 Mar 2020
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CAD/EDA Symbols, Footprints and Models
样片和购买
| 产品型号 | 从分销商订购 | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度（ºC） | Country of Origin | Budgetary Price (US$)*/Qty | ||
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| 最小值 | 最大值 | |||||||||||
| STF2N80K5 | 4 distributors | 样片和购买 立即购买 |
批量生产
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EAR99 | NEC | Tube | TO-220FP | - | - | CHINA | ||
