These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics,rendering them suitable for the most demanding high efficiency converters.
- Extremely low gate charge
- Excellent output capacitance COSS profile
- 100% avalanche tested
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.