STF6N60DM2

已停产
Design Win

N沟道600 V、0.95 Ohm典型值、5 A MDmesh DM2功率MOSFET,TO-220FP封装

下载数据手册

产品概述

描述

This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.

  • 所有功能

    • Fast-recovery body diode
    • Extremely low gate charge and input capacitance
    • Low on-resistance
    • 100% avalanche tested
    • Extremely high dv/dt ruggedness
    • Zener-protected

EDA符号、封装和3D模型

STMicroelectronics - STF6N60DM2

Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.

Please select one model supplier :

Symbols

符号

Footprints

封装

3D model

3D模型