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STF7N65M6

批量生产
储存到myST

N沟道650 V、0.91 Ohm典型值、5 A MDmesh M6功率MOSFET，TO-220FP封装

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概述
样片和购买
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工具与软件
质量与可靠性
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快速链接

  • The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.

    主要特性

    • Reduced switching losses
    • Lower RDS(on) per area vs previous generation
    • Low gate input resistance
    • 100% avalanche tested
    • Zener-protected
    阅读更多 阅读较少信息

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900 V MDmesh K5 MOSFETs
900 V MDmesh K5 MOSFETs

Industry’s first 900 V MOSFETs with on-state resistance below 100 mΩ

Getting started with eDesignSuite
Getting started with eDesignSuite

The smart way to design your application

800 V MDmesh K5 MOSFETs
800 V MDmesh K5 MOSFETs

Available in 10 different RDS(on) values and 9 packages

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Power MOSFETs

Browse our power MOSFET portfolio, featuring a broad range of breakdown voltages from –100 V to 1700 V.

Super-junction high-voltage MOSFETs for resonant topologies

The MDmesh M6 MOSFET series (600 V to 700 V) opens the door to power converter designers for new scenarios targeting high efficiency and power density.

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技术文档

    • 描述 版本 文档大小 操作
      		DS11822
      N-channel 650 V, 0.91 Ω typ., 5 A, MDmesh™ M6 Power MOSFET in a TO‑220FP package       		2.0
      476.64 KB
      		PDF
      DS11822

      N-channel 650 V, 0.91 Ω typ., 5 A, MDmesh™ M6 Power MOSFET in a TO‑220FP package

      PDF
    • 描述 版本 文档大小 操作
      		AN5442
      45W USB Type-C™ PD adapter board with controllers STCH03 QR flyback,SRK1001 adaptive synchronous rectifier and STUSB4761 USB Type-C™ PD       		1.1
      14.03 MB
      		PDF
      		AN4250
      Fishbone diagram for power factor correction       		1.1
      772.32 KB
      		PDF
      		AN2842
      Paralleling of power MOSFETs in PFC topology       		1.4
      896.91 KB
      		PDF
      		AN2344
      Power MOSFET avalanche characteristics and ratings       		1.3
      880.04 KB
      		PDF
      		AN5318
      Super-junction power device evolution: characteristics analysis and performance comparison between MDmesh M2 and MDmesh M6 technologies       		1.0
      1.09 MB
      		PDF
      		AN4337
      The avalanche issue: comparing the impacts of the IAR and EAS parameters       		1.1
      347.01 KB
      		PDF
      AN5442

      45W USB Type-C™ PD adapter board with controllers STCH03 QR flyback,SRK1001 adaptive synchronous rectifier and STUSB4761 USB Type-C™ PD

      PDF
      AN4250

      Fishbone diagram for power factor correction

      PDF
      AN2842

      Paralleling of power MOSFETs in PFC topology

      PDF
      AN2344

      Power MOSFET avalanche characteristics and ratings

      PDF
      AN5318

      Super-junction power device evolution: characteristics analysis and performance comparison between MDmesh M2 and MDmesh M6 technologies

      PDF
      AN4337

      The avalanche issue: comparing the impacts of the IAR and EAS parameters

      PDF
    • 描述 版本 文档大小 操作
      		TN1156
      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products       		1.0
      657.71 KB
      		PDF
      TN1156

      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products

      PDF
    • 描述 版本 文档大小 操作
      		UM1575
      Spice model tutorial for Power MOSFETs       		1.3
      1.51 MB
      		PDF
      UM1575

      Spice model tutorial for Power MOSFETs

      PDF

硬件型号、CAD库及SVD

    • 描述 版本 文档大小 操作
      		stf7n65m6 Pspice Model 1.0
      10.56 KB
      		ZIP

      stf7n65m6 Pspice Model

      ZIP

出版刊物和宣传资料

    • 描述 版本 文档大小 操作
      		300-1200 V MDmesh:The most complete SJ MOSFETs offer for (H)EV power solutions 1.0
      568.16 KB
      		PDF
      		400/650 V MDmesh™ DM2 :STPOWER MOSFET series with fast-recovery body diode 1.1
      203.54 KB
      		PDF
      		ST MOSFET Finder, the new app for Android and iOS 1.0
      305.22 KB
      		PDF
      		STPOWER MOSFET MDmesh™ M6 600 to 700 V Super Junction MOSFETs to boost the efficiency 1.0
      173.61 KB
      		PDF

      300-1200 V MDmesh:The most complete SJ MOSFETs offer for (H)EV power solutions

      PDF

      400/650 V MDmesh™ DM2 :STPOWER MOSFET series with fast-recovery body diode

      PDF

      ST MOSFET Finder, the new app for Android and iOS

      PDF

      STPOWER MOSFET MDmesh™ M6 600 to 700 V Super Junction MOSFETs to boost the efficiency

      PDF

质量与可靠性

产品型号 Marketing Status 封装 等级规格 符合RoHS级别 材料声明**
STF7N65M6
批量生产
TO-220FP 工业 Ecopack2

STF7N65M6

Package:

TO-220FP

Material Declaration**:

More Info

Marketing Status

批量生产

Package

TO-220FP

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持 。

样片和购买

产品型号
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封装
包装类型
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ECCN (US)
Country of Origin
Budgetary Price (US$)*/Qty
STF7N65M6 没有经销商，请联系我们的销售办事处 TO-220FP Tube
批量生产
EAR99 CHINA

STF7N65M6

封装

TO-220FP

包装类型

Tube
更多信息

Budgetary Price (US$)*/Qty

供货状态

批量生产

Budgetary Price (US$)* / Qty

ECCN (US)

EAR99

Country of Origin

CHINA

(*) 建议转售单价（美元）仅用于预算用途。如需以当地货币计价的报价，请联系您当地的 ST销售办事处 或我们的 经销商 。