STFH13N60M2

批量生产

N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh M2 Power MOSFET in TO-220FP wide creepage package

下载数据手册

Order a free sample and buy from our distributors

样片和购买
概述
工具与软件
资源
解决方案
质量与可靠性
Sales Briefcase
eDesignSuite
开始
样片和购买
Partner products
  • This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.

    The TO-220FP wide creepage package provides increased surface insulation for Power MOSFETs to prevent failure due to arcing, which can occur in polluted environments.

    主要特性

    • Extremely low gate charge
    • Excellent output capacitance (COSS) profile
    • 100% avalanche tested
    • Zener-protected
    • Wide creepage distance of 4.25 mm between the pins

样片和购买

产品型号
封装
包装类型
供货状态
ECCN (US)
Country of Origin
Approximate Price (US$)* / Qty
从ST订购
从分销商订购
STFH13N60M2 TO-220FP wide creepage Tube
批⁠量⁠生⁠产
EAR99 CHINA 获取样片 查看供货情况

...的经销商可用性STFH13N60M2

代理商名称
地区 库存 最小订购量 第三方链接
DIGIKEY WORLDWIDE 442 1 马上订购
RS COMPONENTS EUROPE 765 1 马上订购
MOUSER WORLDWIDE 66 1 马上订购
Farnell Element14 EUROPE 455 1 马上订购

代理商库存报告日期: 2020-03-29

代理商名称

DIGIKEY

库存

442

Min.Order

1

地区

WORLDWIDE 马上订购

RS COMPONENTS

库存

765

Min.Order

1

地区

EUROPE 马上订购

MOUSER

库存

66

Min.Order

1

地区

WORLDWIDE 马上订购

Farnell Element14

库存

455

Min.Order

1

地区

EUROPE 马上订购

代理商库存报告日期: 2020-03-29

STFH13N60M2

封装

TO-220FP wide creepage

包装类型

Tube

Approximate Price (US$)* / Qty

...的经销商可用性STFH13N60M2

代理商名称
地区 库存 最小订购量 第三方链接
DIGIKEY WORLDWIDE 442 1 马上订购
RS COMPONENTS EUROPE 765 1 马上订购
MOUSER WORLDWIDE 66 1 马上订购
Farnell Element14 EUROPE 455 1 马上订购

代理商库存报告日期: 2020-03-29

代理商名称

DIGIKEY

库存

442

Min.Order

1

地区

WORLDWIDE 马上订购

RS COMPONENTS

库存

765

Min.Order

1

地区

EUROPE 马上订购

MOUSER

库存

66

Min.Order

1

地区

WORLDWIDE 马上订购

Farnell Element14

库存

455

Min.Order

1

地区

EUROPE 马上订购

代理商库存报告日期: 2020-03-29

供货状态

批⁠量⁠生⁠产

Budgetary Price (US$)* / Qty

ECCN (US)

EAR99

Country of Origin

CHINA

(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商

精选 产品

移动应用

    • 产品型号

      STPOWER MOSFET finder mobile app for tablets and smartphones

00 选择要下载的文档

技术文档

    • 描述 版本 文档大小 操作
      DS11637
      N-channel 600 V, 0.35 Ω typ., 11 A MDmesh™ M2 Power MOSFET in a TO-220FP wide creepage package
      2.0
      668.45 KB
      PDF
      DS11637

      N-channel 600 V, 0.35 Ω typ., 11 A MDmesh™ M2 Power MOSFET in a TO-220FP wide creepage package

    • 描述 版本 文档大小 操作
      AN4250
      Fishbone diagram for power factor correction
      1.1
      772.32 KB
      PDF
      AN4829
      Fishbone diagrams for a forward converter
      1.1
      1.35 MB
      PDF
      AN4720
      Half bridge resonant LLC converters and primary side MOSFET selection
      1.0
      1.4 MB
      PDF
      AN4742
      MDmesh™ M2 EP: an additional improvement to MDmesh™ M2 ST Super-Junction Technology
      1.0
      1.29 MB
      PDF
      AN4406
      MDmesh™ M2: the new ST super-junction technology ideal for resonant topologies
      1.0
      652.78 KB
      PDF
      AN2842
      Paralleling of power MOSFETs in PFC topology
      1.4
      896.91 KB
      PDF
      AN2344
      Power MOSFET avalanche characteristics and ratings
      1.3
      880.04 KB
      PDF
      AN5318
      Super-junction power device evolution: characteristics analysis and performance comparison between MDmesh M2 and MDmesh M6 technologies
      1.0
      1.09 MB
      PDF
      AN4337
      The avalanche issue: comparing the impacts of the IAR and EAS parameters
      1.1
      347.01 KB
      PDF
      AN4250

      Fishbone diagram for power factor correction

      AN4829

      Fishbone diagrams for a forward converter

      AN4720

      Half bridge resonant LLC converters and primary side MOSFET selection

      AN4742

      MDmesh™ M2 EP: an additional improvement to MDmesh™ M2 ST Super-Junction Technology

      AN4406

      MDmesh™ M2: the new ST super-junction technology ideal for resonant topologies

      AN2842

      Paralleling of power MOSFETs in PFC topology

      AN2344

      Power MOSFET avalanche characteristics and ratings

      AN5318

      Super-junction power device evolution: characteristics analysis and performance comparison between MDmesh M2 and MDmesh M6 technologies

      AN4337

      The avalanche issue: comparing the impacts of the IAR and EAS parameters

    • 描述 版本 文档大小 操作
      TN1156
      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products
      1.0
      657.71 KB
      PDF
      TN1156

      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products

    • 描述 版本 文档大小 操作
      UM1575
      Spice model tutorial for Power MOSFETs
      1.3
      1.51 MB
      PDF
      UM1575

      Spice model tutorial for Power MOSFETs

硬件型号、CAD库及SVD

    • 描述 版本 文档大小 操作
      STFH13N60M2 PSpice model 1.0
      9.75 KB
      ZIP

      STFH13N60M2 PSpice model

出版刊物和宣传资料

    • 描述 版本 文档大小 操作
      300-1200 V MDmesh:The most complete SJ MOSFETs offer for (H)EV power solutions 1.0
      568.16 KB
      PDF
      500/650 V MDmesh™ M2 1.0
      1.03 MB
      PDF
      600/650 V MDmesh™ M2 1.0
      788.16 KB
      PDF

      300-1200 V MDmesh:The most complete SJ MOSFETs offer for (H)EV power solutions

      500/650 V MDmesh™ M2

      600/650 V MDmesh™ M2

    • 描述 版本 文档大小 操作
      Electric vehicle (EV) ecosystem 1.1
      1.28 MB
      PDF

      Electric vehicle (EV) ecosystem

产品型号 供货状态 封装 等级规格 符合RoHS级别 材料声明**
STFH13N60M2
批量生产
TO-220FP wide creepage Industrial Ecopack2

STFH13N60M2

Package:

TO-220FP wide creepage

Material Declaration**:

PDF XML

Marketing Status

批量生产

Package

TO-220FP wide creepage

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此,它们可能不是100%适用于特定的设备。有关特定设备的信息,请联系 销售支持

支持中心或提供反馈