产品概述
描述
This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. The TO-220FP wide creepage package provides increased surface insulation for Power MOSFETs to prevent failure due to arcing, which can occur in polluted environments.-
所有功能
- Extremely low gate charge
- Excellent output capacitance (COSS) profile
- 100% avalanche tested
- Zener-protected
- Wide distance of 4.25 mm between the pins
精选 视频
Ideal for resonant-type power supplies
Ideal for hard-switching and high-current topologies
特别推荐
All tools & software
EDA符号、封装和3D模型
STMicroelectronics - STFH18N60M2
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符号
封装
3D模型
全部资源
| Resource title | 版本 | Latest update |
|---|
SPICE models (1)
| Resource title | 版本 | Latest update | ||
|---|---|---|---|---|
| ZIP | 1.0 | 01 Aug 2016 |
01 Aug 2016
|
样片和购买
| 产品型号 | 从分销商订购 | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度（ºC） | Country of Origin | Budgetary Price (US$)*/Qty | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | |||||||||||
| STFH18N60M2 | 4 distributors | Free Sample Buy Direct |
批量生产
|
EAR99 | NEC | Tube | TO-220FP wide creepage | - | - | CHINA | ||