STFH40N60M2

批量生产

N沟道600 V、0.078 Ohm典型值、34 A MDmesh M2功率MOSFET,TO-220FP宽沿面封装

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质量与可靠性
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  • This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.

    The TO-220FP wide creepage package provides increased surface insulation for Power MOSFETs to prevent failure due to arcing, which can occur in polluted environments.

    主要特性

    • Extremely low gate charge
    • Excellent output capacitance (COSS) profile
    • 100% avalanche tested
    • Zener-protected
    • Wide creepage distance of 4.25 mm between the pins

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质量与可靠性

产品型号 Marketing Status 封装 等级规格 符合RoHS级别 材料声明**
STFH40N60M2
批量生产
TO-220FP wide creepage 工业 Ecopack2

STFH40N60M2

Package:

TO-220FP wide creepage

Material Declaration**:

PDF XML

Marketing Status

批量生产

Package

TO-220FP wide creepage

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此,它们可能不是100%适用于特定的设备。有关特定设备的信息,请联系 销售支持

样片和购买

产品型号
从分销商订购
从ST订购
供货状态
ECCN (US)
ECCN (EU)
包装类型
封装
温度(ºC) Country of Origin
Budgetary Price (US$)*/Qty
最小值
最大值
STFH40N60M2 没有经销商,请联系我们的销售办事处
批量生产
EAR99 NEC Tube TO-220FP wide creepage - - CHINA

STFH40N60M2

供货状态

批量生产

ECCN (US)

EAR99

Budgetary Price (US$)*/Qty

ECCN (EU)

NEC

包装类型

Tube

封装

TO-220FP wide creepage

Operating Temperature (°C)

(最小值)

-

(最大值)

-

Budgetary Price (US$)* / Qty

Country of Origin

CHINA

(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商