N-channel 60 V, 0.0024 Ohm, 80 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in I2PAKFP package

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  • This device is an N-channel Power MOSFET developed using the 6thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages.

    主要特性

    • Fully insulated and low profile package with increased creepage path from pin to heatsink plate
    • Low gate charge
    • Very low on-resistance
    • High avalanche ruggedness
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      DS9006
      N-channel 60 V, 0.0024 Ω, 80 A STripFET™ VI DeepGATE™ Power MOSFET in I²PAKFP package
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      DS9006

      N-channel 60 V, 0.0024 Ω, 80 A STripFET™ VI DeepGATE™ Power MOSFET in I²PAKFP package