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These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
主要特性
- Industry’s lowest RDS(on) x area
- Industry’s best figure of merit (FoM)
- Ultra-low gate charge
- 100% avalanche tested
- Zener-protected
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EDA Symbols, Footprints and 3D Models
STMicroelectronics - STFU10N80K5
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Symbols
Footprints
3D models
样片和购买
| 产品型号 | 从分销商订购 | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度（ºC） | Country of Origin | Budgetary Price (US$)*/Qty | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | |||||||||||
| STFU10N80K5 | 3 distributors | Free Sample Buy Direct |
批量生产
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EAR99 | NEC | Tube | TO-220FP ultra narrow leads | - | - | CHINA | ||
