-
These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
主要特性
- Industry’s lowest RDS(on) x area
- Industry’s best figure of merit (FoM)
- Ultra-low gate charge
- 100% avalanche tested
- Zener-protected
精选 视频
All tools & software
All resources
产品规格 (1)
Resource title | Latest update | |||
---|---|---|---|---|
08 Sep 2016 |
08 Sep 2016
|
应用手册 (4)
Resource title | Latest update | |||
---|---|---|---|---|
13 Sep 2018 |
13 Sep 2018
|
|||
13 Sep 2018 |
13 Sep 2018
|
|||
13 Sep 2018 |
13 Sep 2018
|
|||
13 Sep 2018 |
13 Sep 2018
|
技术文档 (1)
Resource title | Latest update | |||
---|---|---|---|---|
13 Nov 2016 |
13 Nov 2016
|
用户手册 (1)
Resource title | Latest update | |||
---|---|---|---|---|
21 Oct 2016 |
21 Oct 2016
|
宣传册 (5)
Resource title | Latest update | |||
---|---|---|---|---|
24 Nov 2020 |
24 Nov 2020
|
|||
22 Jan 2020 |
22 Jan 2020
|
|||
08 Jan 2021 |
08 Jan 2021
|
|||
06 Oct 2020 |
06 Oct 2020
|
|||
08 May 2020 |
08 May 2020
|
手册 (1)
Resource title | Latest update | |||
---|---|---|---|---|
23 Mar 2020 |
23 Mar 2020
|
EDA Symbols, Footprints and 3D Models
样片和购买
产品型号 | 从分销商订购 | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度(ºC) | Country of Origin | Budgetary Price (US$)*/Qty | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|
最小值 | 最大值 | |||||||||||
STFU10N80K5 | 3 distributors | Free Sample Buy Direct |
批量生产
|
EAR99 | NEC | Tube | TO-220FP ultra narrow leads | - | - | CHINA |