产品概述
描述
These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
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所有功能
- Industry’s lowest RDS(on) x area
- Industry’s best figure of merit (FoM)
- Ultra-low gate charge
- 100% avalanche tested
- Zener-protected
特别推荐
EDA符号、封装和3D模型
STMicroelectronics - STFU10N80K5
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符号
封装
3D模型
样片和购买
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| 产品型号 | Order from distributors | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度（ºC） | Country of Origin | Budgetary Price (US$)*/Qty | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | |||||||||||
| STFU10N80K5 | distributors 无法联系到经销商，请联系我们的销售办事处 | 批量生产 | EAR99 | NEC | Tube | TO-220FP ultra narrow leads | - | - | CHINA | | ||
distributors
无法联系到经销商，请联系我们的销售办事处
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