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STFU11N65M2

储存到myST

N沟道650 V、0.60 Ohm典型值、7 A MDmesh M2功率MOSFET，TO-220FP超窄引线封装

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This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.

主要特性
- Extremely low gate charge
- Excellent output capacitance (C_OSS) profile
- 100% avalanche tested
- Zener-protected
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产品型号	状态	描述	类型	供应商
STPOWER MOSFET Finder	批量生产	用于安卓和iOS的MOSFET产品查找应用	查找器App	ST	STPOWER MOSFET Finder 描述: 用于安卓和iOS的MOSFET产品查找应用

All resources

产品规格 (1)

	Resource title		Latest update
PDF	DS12086 N-channel 650 V, 0.60 O typ., 7 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package 2.0		01 Jan 1970	01 Jan 1970 DS12086 N-channel 650 V, 0.60 O typ., 7 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package 2.0

应用手册 (5 of 9)

	Resource title	Latest update
PDF	AN4250 Fishbone diagram for power factor correction 1.1	01 Jan 1970	01 Jan 1970 AN4250 Fishbone diagram for power factor correction 1.1
PDF	AN4829 Fishbone diagrams for a forward converter 1.1	01 Jan 1970	01 Jan 1970 AN4829 Fishbone diagrams for a forward converter 1.1
PDF	AN4720 Half bridge resonant LLC converters and primary side MOSFET selection 1.0	01 Jan 1970	01 Jan 1970 AN4720 Half bridge resonant LLC converters and primary side MOSFET selection 1.0
PDF	AN4742 MDmesh™ M2 EP: an additional improvement to MDmesh™ M2 ST Super-Junction Technology 1.0	01 Jan 1970	01 Jan 1970 AN4742 MDmesh™ M2 EP: an additional improvement to MDmesh™ M2 ST Super-Junction Technology 1.0
PDF	AN4406 MDmesh™ M2: the new ST super-junction technology ideal for resonant topologies 1.0	01 Jan 1970	01 Jan 1970 AN4406 MDmesh™ M2: the new ST super-junction technology ideal for resonant topologies 1.0
PDF	AN2842 Paralleling of power MOSFETs in PFC topology 1.4	01 Jan 1970	01 Jan 1970 AN2842 Paralleling of power MOSFETs in PFC topology 1.4
PDF	AN2344 Power MOSFET avalanche characteristics and ratings 1.3	01 Jan 1970	01 Jan 1970 AN2344 Power MOSFET avalanche characteristics and ratings 1.3
PDF	AN5318 Super-junction power device evolution: characteristics analysis and performance comparison between MDmesh M2 and MDmesh M6 technologies 1.0	01 Jan 1970	01 Jan 1970 AN5318 Super-junction power device evolution: characteristics analysis and performance comparison between MDmesh M2 and MDmesh M6 technologies 1.0
PDF	AN4337 The avalanche issue: comparing the impacts of the IAR and EAS parameters 1.1	01 Jan 1970	01 Jan 1970 AN4337 The avalanche issue: comparing the impacts of the IAR and EAS parameters 1.1

技术文档 (1)

	Resource title		Latest update
PDF	TN1156 Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products 1.0		01 Jan 1970	01 Jan 1970 TN1156 Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products 1.0

用户手册 (1)

	Resource title		Latest update
PDF	UM1575 Spice model tutorial for Power MOSFETs 1.3		01 Jan 1970	01 Jan 1970 UM1575 Spice model tutorial for Power MOSFETs 1.3

宣传册 (5 of 6)

	Resource title	Latest update
PDF	300-1200 V MDmesh:The most complete SJ MOSFETs offer for (H)EV power solutions 1.0	01 Jan 1970	01 Jan 1970 300-1200 V MDmesh:The most complete SJ MOSFETs offer for (H)EV power solutions 1.0
PDF	400/650 V MDmesh™ DM2 :STPOWER MOSFET series with fast-recovery body diode 1.1	01 Jan 1970	01 Jan 1970 400/650 V MDmesh™ DM2 :STPOWER MOSFET series with fast-recovery body diode 1.1
PDF	500/650 V MDmesh M2 series: High Voltage Super-junction MOSFET 1.0	01 Jan 1970	01 Jan 1970 500/650 V MDmesh M2 series: High Voltage Super-junction MOSFET 1.0
PDF	600/650 V MDmesh™ M2 1.0	01 Jan 1970	01 Jan 1970 600/650 V MDmesh™ M2 1.0
PDF	ST MOSFET Finder, the new app for Android and iOS 1.0	01 Jan 1970	01 Jan 1970 ST MOSFET Finder, the new app for Android and iOS 1.0
PDF	STPOWER MOSFET MDmesh M2: 600 to 650 V ST’s super-junction HV MOSFET series 1.0	01 Jan 1970	01 Jan 1970 STPOWER MOSFET MDmesh M2: 600 to 650 V ST’s super-junction HV MOSFET series 1.0

手册 (1)

	Resource title		Latest update
PDF	Electric vehicle (EV) ecosystem 1.1		01 Jan 1970	01 Jan 1970 Electric vehicle (EV) ecosystem 1.1

EDA Symbols, Footprints and 3D Models

质量与可靠性

产品型号	Marketing Status	封装	等级规格	符合RoHS级别	材料声明**
STFU11N65M2	批量生产	TO-220FP ultra narrow leads	工业	Ecopack2	PDF XML

STFU11N65M2

Package:

TO-220FP ultra narrow leads

Material Declaration**:

PDF XML

More Info

Marketing Status

Package

TO-220FP ultra narrow leads

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系销售支持。

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最小值

最大值

STFU11N65M2

Available at 1 distributors

经销商的可用性STFU11N65M2

代理商名称	地区	库存	最小订购量	第三方链接
MOUSER	WORLDWIDE	90	1	马上订购

代理商库存报告日期: 2021-01-17

代理商名称

MOUSER

库存

Min.Order

地区

WORLDWIDE 马上订购

代理商库存报告日期: 2021-01-17

Free Sample Buy Direct

EAR99

NEC

Tube

TO-220FP ultra narrow leads

CHINA

STFU11N65M2

供货状态

批量生产

ECCN (US)

EAR99

更多信息

Budgetary Price (US$)*/Qty

经销商的可用性STFU11N65M2

代理商名称	地区	库存	最小订购量	第三方链接
MOUSER	WORLDWIDE	90	1	马上订购

代理商库存报告日期: 2021-01-17

代理商名称

MOUSER

库存

Min.Order

地区

WORLDWIDE 马上订购

代理商库存报告日期: 2021-01-17

ECCN (EU)

NEC

包装类型

Tube

封装

TO-220FP ultra narrow leads

Operating Temperature (°C)

(最小值)

(最大值)

Budgetary Price (US$)* / Qty

Country of Origin

CHINA

(*) 建议转售单价（美元）仅用于预算用途。如需以当地货币计价的报价，请联系您当地的 ST销售办事处或我们的经销商。

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