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Partner products
  • This N-channel Zener-protected Power MOSFET is designed using ST’s revolutionary avalanche-rugged very high voltage SuperMESH™ 5 technology, based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance, and ultra-low gate charge for applications which require superior power density and high efficiency.

    Key Features

    • Worldwide best FOM (figure of merit)
    • Ultra low gate charge
    • 100% avalanche tested
    • Zener-protected

样片和购买

产品型号
封装
包装类型
供货状态
预算价格(US$)
数量
ECCN (US)
Country of Origin
从分销商订购
从ST订购
STFW2N105K5 TO-3PF Tube
批量生产
- - EAR99 KOREA (south) 没有经销商,请联系我们的销售办事处

STFW2N105K5

封装

TO-3PF

包装类型

Tube

单价(US$)

*

供货状态

批量生产

单价(US$)

-

数量

-

ECCN (US)

EAR99

Country of Origin

KOREA (south)

(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商

精选 产品

适合您的资源

开发工具硬件

    • 产品型号

      MOSFET product finder application for Android and iOS

00 选择要下载的文档

技术文档

    • 描述 版本 文档大小 操作
      DS10322
      N-channel 1050 V, 6 Ω typ., 1.5 A Zener-protected SuperMESH™ 5 Power MOSFET in a TO-3PF package
      1.0
      860.78 KB
      PDF
      DS10322

      N-channel 1050 V, 6 Ω typ., 1.5 A Zener-protected SuperMESH™ 5 Power MOSFET in a TO-3PF package

    • 描述 版本 文档大小 操作
      AN4250
      Fishbone diagram for power factor correction
      1.1
      772.32 KB
      PDF
      AN2842
      Paralleling of power MOSFETs in PFC topology
      1.4
      896.91 KB
      PDF
      AN2344
      Power MOSFET avalanche characteristics and ratings
      1.3
      880.04 KB
      PDF
      AN4337
      The avalanche issue: comparing the impacts of the IAR and EAS parameters
      1.1
      347.01 KB
      PDF
      AN4250

      Fishbone diagram for power factor correction

      AN2842

      Paralleling of power MOSFETs in PFC topology

      AN2344

      Power MOSFET avalanche characteristics and ratings

      AN4337

      The avalanche issue: comparing the impacts of the IAR and EAS parameters

    • 描述 版本 文档大小 操作
      TN1156
      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products
      1.0
      657.71 KB
      PDF
      TN1156

      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products

    • 描述 版本 文档大小 操作
      UM1575
      Spice model tutorial for Power MOSFETs
      1.3
      1.51 MB
      PDF
      UM1575

      Spice model tutorial for Power MOSFETs

硬件型号、CAD库及SVD

    • 描述 版本 文档大小 操作
      STFW2N105K5 PSpice model 1.0
      10.93 KB
      ZIP

      STFW2N105K5 PSpice model

出版刊物和宣传资料

    • 描述 版本 文档大小 操作
      800-1050V MDmesh™ K5 ST’s first super-junction VHV MOSFET Series 1.0
      516.44 KB
      PDF
      800-1700 V MDmesh K5: Very high voltage super-junction Power MOSFET series 1.0
      477.67 KB
      PDF

      800-1050V MDmesh™ K5 ST’s first super-junction VHV MOSFET Series

      800-1700 V MDmesh K5: Very high voltage super-junction Power MOSFET series

    • 描述 版本 文档大小 操作
      Electric vehicle (EV) ecosystem 1.1
      1.28 MB
      PDF

      Electric vehicle (EV) ecosystem

产品型号 供货状态 封装 等级规格 符合RoHS级别 Material Declaration**
STFW2N105K5
批量生产
TO-3PF 工业 Ecopack1

STFW2N105K5

Package:

TO-3PF

Material Declaration**:

Marketing Status

批量生产

Package

TO-3PF

Grade

Industrial

RoHS Compliance Grade

Ecopack1

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.