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STFW42N60M2-EP

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N沟道600 V、0.076 Ohm典型值、34 A MDmesh M2 EP功率MOSFET，TO-3PF封装

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These devices are N-channel Power MOSFETs developed using MDmesh™ M2 EP enhanced performance technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics with very low turn-off switching losses, rendering them suitable for the most demanding very high frequency converters.

主要特性
- Extremely low gate charge
- Excellent output capacitance (C_OSS) profile
- Low gate input resistance
- Very low turn-off switching losses
- 100% avalanche tested
- Zener-protected
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产品型号	状态	描述	类型	供应商
STPOWER MOSFET Finder	批量生产	用于安卓和iOS的MOSFET产品查找应用	查找器App	ST	STPOWER MOSFET Finder 描述: 用于安卓和iOS的MOSFET产品查找应用

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产品规格 (1)

	Resource title		Latest update
PDF	DS10814 N-channel 600 V, 0.076 Ω typ., 34 A MDmesh™ M2 EP Power MOSFETs in TO-220FP and TO-3PF packages 1.0		25 Jan 2015	25 Jan 2015 DS10814 N-channel 600 V, 0.076 Ω typ., 34 A MDmesh™ M2 EP Power MOSFETs in TO-220FP and TO-3PF packages 1.0

应用手册 (5 of 9)

	Resource title	Latest update
PDF	AN4250 Fishbone diagram for power factor correction 1.1	13 Sep 2018	13 Sep 2018 AN4250 Fishbone diagram for power factor correction 1.1
PDF	AN4829 Fishbone diagrams for a forward converter 1.1	13 Sep 2018	13 Sep 2018 AN4829 Fishbone diagrams for a forward converter 1.1
PDF	AN4720 Half bridge resonant LLC converters and primary side MOSFET selection 1.0	13 Sep 2018	13 Sep 2018 AN4720 Half bridge resonant LLC converters and primary side MOSFET selection 1.0
PDF	AN4742 MDmesh™ M2 EP: an additional improvement to MDmesh™ M2 ST Super-Junction Technology 1.0	03 Aug 2015	03 Aug 2015 AN4742 MDmesh™ M2 EP: an additional improvement to MDmesh™ M2 ST Super-Junction Technology 1.0
PDF	AN4406 MDmesh™ M2: the new ST super-junction technology ideal for resonant topologies 1.0	13 Sep 2018	13 Sep 2018 AN4406 MDmesh™ M2: the new ST super-junction technology ideal for resonant topologies 1.0
PDF	AN2842 Paralleling of power MOSFETs in PFC topology 1.4	13 Sep 2018	13 Sep 2018 AN2842 Paralleling of power MOSFETs in PFC topology 1.4
PDF	AN2344 Power MOSFET avalanche characteristics and ratings 1.3	13 Sep 2018	13 Sep 2018 AN2344 Power MOSFET avalanche characteristics and ratings 1.3
PDF	AN5318 Super-junction power device evolution: characteristics analysis and performance comparison between MDmesh M2 and MDmesh M6 technologies 1.0	18 Apr 2019	18 Apr 2019 AN5318 Super-junction power device evolution: characteristics analysis and performance comparison between MDmesh M2 and MDmesh M6 technologies 1.0
PDF	AN4337 The avalanche issue: comparing the impacts of the IAR and EAS parameters 1.1	13 Sep 2018	13 Sep 2018 AN4337 The avalanche issue: comparing the impacts of the IAR and EAS parameters 1.1

技术文档 (1)

	Resource title		Latest update
PDF	TN1156 Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products 1.0		13 Nov 2016	13 Nov 2016 TN1156 Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products 1.0

用户手册 (1)

	Resource title		Latest update
PDF	UM1575 Spice model tutorial for Power MOSFETs 1.3		21 Oct 2016	21 Oct 2016 UM1575 Spice model tutorial for Power MOSFETs 1.3

宣传册 (5 of 6)

	Resource title	Latest update
PDF	300-1200 V MDmesh:The most complete SJ MOSFETs offer for (H)EV power solutions 1.0	22 Jan 2020	22 Jan 2020 300-1200 V MDmesh:The most complete SJ MOSFETs offer for (H)EV power solutions 1.0
PDF	400/650 V MDmesh™ DM2 :STPOWER MOSFET series with fast-recovery body diode 1.1	05 Jun 2020	05 Jun 2020 400/650 V MDmesh™ DM2 :STPOWER MOSFET series with fast-recovery body diode 1.1
PDF	500/650 V MDmesh M2 series: High Voltage Super-junction MOSFET 1.0	04 May 2020	04 May 2020 500/650 V MDmesh M2 series: High Voltage Super-junction MOSFET 1.0
PDF	600/650 V MDmesh™ M2 1.0	17 Oct 2019	17 Oct 2019 600/650 V MDmesh™ M2 1.0
PDF	ST MOSFET Finder, the new app for Android and iOS 1.0	08 May 2020	08 May 2020 ST MOSFET Finder, the new app for Android and iOS 1.0
PDF	STPOWER MOSFET MDmesh M2: 600 to 650 V ST’s super-junction HV MOSFET series 1.0	20 Jul 2020	20 Jul 2020 STPOWER MOSFET MDmesh M2: 600 to 650 V ST’s super-junction HV MOSFET series 1.0

手册 (1)

	Resource title		Latest update
PDF	Electric vehicle (EV) ecosystem 1.1		23 Mar 2020	23 Mar 2020 Electric vehicle (EV) ecosystem 1.1

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质量与可靠性

产品型号	Marketing Status	封装	等级规格	符合RoHS级别	材料声明**
STFW42N60M2-EP	批量生产	TO-3PF	工业	Ecopack1

STFW42N60M2-EP

Package:

TO-3PF

Material Declaration**:

More Info

Marketing Status

Package

TO-3PF

Grade

Industrial

RoHS Compliance Grade

Ecopack1

(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系销售支持。

样片和购买

产品型号

从分销商订购

从ST订购

供货状态

ECCN (US)

ECCN (EU)

包装类型

封装

温度（ºC）

Country of Origin

Budgetary Price (US$)*/Qty

最小值

最大值

STFW42N60M2-EP

Available at 1 distributors

经销商的可用性STFW42N60M2-EP

代理商名称	地区	库存	最小订购量	第三方链接
MOUSER	WORLDWIDE	300	1	马上订购

代理商库存报告日期: 2021-01-18

代理商名称

MOUSER

库存

300

Min.Order

地区

WORLDWIDE 马上订购

代理商库存报告日期: 2021-01-18

Free Sample Buy Direct

EAR99

NEC

Tube

TO-3PF

SOUTH KOREA

STFW42N60M2-EP

供货状态

批量生产

ECCN (US)

EAR99

更多信息

Budgetary Price (US$)*/Qty

经销商的可用性STFW42N60M2-EP

代理商名称	地区	库存	最小订购量	第三方链接
MOUSER	WORLDWIDE	300	1	马上订购

代理商库存报告日期: 2021-01-18

代理商名称

MOUSER

库存

300

Min.Order

地区

WORLDWIDE 马上订购

代理商库存报告日期: 2021-01-18

ECCN (EU)

NEC

包装类型

Tube

封装

TO-3PF

Operating Temperature (°C)

(最小值)

(最大值)

Budgetary Price (US$)* / Qty

Country of Origin

SOUTH KOREA

(*) 建议转售单价（美元）仅用于预算用途。如需以当地货币计价的报价，请联系您当地的 ST销售办事处或我们的经销商。

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