产品概述
描述
Using the well consolidated high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.
The strengthened layout coupled with the companys proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.
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所有功能
- 100% avalanche tested
- High speed switching
- Intrinsic capacitances and Qg minimized
- Creepage distance path is 5.4 mm (typ.) for TO-3PF
- Fully isolated TO-3PF plastic packages
特别推荐
EDA符号、封装和3D模型
STMicroelectronics - STFW4N150
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
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符号
封装
3D模型
样片和购买
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| 产品型号 | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | 封装 | 包装类型 | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | 温度（ºC） | Operating Temperature (°C) (min) | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | |||||||||||||
| STFW4N150 | | | distributors 无法联系到经销商，请联系我们的销售办事处 | TO-3PF | Tube | SOUTH KOREA | EAR99 | NEC | - | - | - | |||
STFW4N150 批量生产
Budgetary Price (US$)*/Qty:
-
distributors
无法联系到经销商，请联系我们的销售办事处
封装:
TO-3PF
包装类型:
Tube
RoHS:
-
Country of Origin:
SOUTH KOREA
ECCN (US):
EAR99
ECCN (EU):
NEC
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