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This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.
主要特性
- 6 μs of short-circuit withstand time
- Low VCE(sat) = 1.55 V (typ.) @ IC = 10 A
- Positive VCE(sat) temperature coefficient
- Tight parameter distribution
- Maximum junction temperature: TJ = 175 °C
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样片和购买
| 产品型号 | 从分销商订购 | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度（ºC） | Country of Origin | Budgetary Price (US$)*/Qty | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | |||||||||||
| STG10M65F2D7 | 没有经销商，请联系我们的销售办事处 |
批量生产
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EAR99 | NEC | Not Applicable | D.SCRIB.100% VI STAT | - | - | CHINA | |||
供货状态
批量生产ECCN (US)
EAR99