STG15M65F2D7

批量生产

650 V、15 A沟槽栅场截止低损耗M系列IGBT晶片,D7封装

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  • This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.

    主要特性

    • 6 µs of minimum short-circuit withstand time
    • Low VCE(sat) = 1.55 V (typ.) @ IC = 15 A
    • Positive VCE(sat) temperature coefficient
    • Tight parameter distribution
    • Maximum junction temperature: TJ = 175 °C

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STMicroelectronics - STG15M65F2D7

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质量与可靠性

产品型号 Marketing Status 等级规格 材料声明**
STG15M65F2D7
批量生产
工业

STG15M65F2D7

Package:

Industrial

Material Declaration**:

PDF XML

Marketing Status

批量生产

Grade

Industrial

(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此,它们可能不是100%适用于特定的设备。有关特定设备的信息,请联系 销售支持

样片和购买

产品型号
从分销商订购
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供货状态
ECCN (US)
ECCN (EU)
包装类型
封装
温度(ºC) Country of Origin
Budgetary Price (US$)*/Qty
最小值
最大值
STG15M65F2D7 没有经销商,请联系我们的销售办事处
批量生产
EAR99 NEC Not Applicable D.SCRIB.100% VI STAT -55 175 ITALY

STG15M65F2D7

供货状态

批量生产

ECCN (US)

EAR99

ECCN (EU)

NEC

包装类型

Not Applicable

封装

D.SCRIB.100% VI STAT

Operating Temperature (°C)

(最小值)

-55

(最大值)

175

Country of Origin

ITALY

(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商