STG15M65F2D7

批量生产

Trench gate field-stop 650 V, 15 A low-loss M series IGBT die in D7 packing

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  • This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.

    主要特性

    • 6 µs of minimum short-circuit withstand time
    • Low VCE(sat) = 1.55 V (typ.) @ IC = 15 A
    • Positive VCE(sat) temperature coefficient
    • Tight parameter distribution
    • Maximum junction temperature: TJ = 175 °C

样片和购买

产品型号
包装类型
供货状态
ECCN (US)
Country of Origin
Budgetary Price (US$)*/Qty
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STG15M65F2D7 Not Applicable
批量生产
EAR99 ITALY 没有经销商,请联系我们的销售办事处

STG15M65F2D7

包装类型

Not Applicable

供货状态

批⁠量⁠生⁠产

ECCN (US)

EAR99

Country of Origin

ITALY

(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商

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技术文档

    • 描述 版本 文档大小 操作
      DS12526
      Trench gate field-stop, 650 V, 15 A, low-loss M series IGBT die in D7 packing
      1.0
      183.84 KB
      PDF
      DS12526

      Trench gate field-stop, 650 V, 15 A, low-loss M series IGBT die in D7 packing

出版刊物和宣传资料

    • 描述 版本 文档大小 操作
      ST IGBT FINDER: The new app for Android and iOS 1.0
      787.04 KB
      PDF

      ST IGBT FINDER: The new app for Android and iOS

产品型号 供货状态 等级规格 材料声明**
STG15M65F2D7
批量生产
Industrial

STG15M65F2D7

Package:

Industrial

Material Declaration**:

PDF XML

Marketing Status

批量生产

Grade

Industrial

(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此,它们可能不是100%适用于特定的设备。有关特定设备的信息,请联系 销售支持