-
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.
Key Features
- AEC-Q101 qualified
- Low-loss series IGBT
- Low VCE(sat) = 1.55 V (typ.) at IC = 200 A
- Positive VCE(sat) temperature coefficient
- Tight parameter distribution
- Maximum junction temperature: TJ = 175 °C
- 6 µs minimum short-circuit withstanding time at TJ = 150 °C
精选 视频
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
