STG25M120F3D7

批量生产
Design Win

1200 V、25 A沟槽栅场截止M系列低损耗IGBT晶片,D7封装

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产品概述

描述

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.

  • 所有功能

    • 10 µs of short-circuit withstand time
    • Low VCE(sat) = 1.85 V (typ.) @ IC = 25 A
    • Positive VCE(sat) temperature coefficient
    • Tight parameter distribution
    • Maximum junction temperature: TJ = 175 °C

EDA符号、封装和3D模型

STMicroelectronics - STG25M120F3D7

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质量与可靠性

产品型号 Marketing Status 等级规格 材料声明**
STG25M120F3D7
批量生产
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STG25M120F3D7

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批量生产

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STG25M120F3D7
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STG25M120F3D7 批量生产

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