产品概述
描述
The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure, whose performance is optimized both in conduction and switching energy for hard-switching applications. A free-wheeling diode characterized by a low forward voltage drop and a very soft recovery behavior is co-packaged. The result is a product specifically designed to maximize efficiency for a wide range of applications.-
所有功能
- Maximum junction temperature: TJ = 175 °C
- Low VCE(sat) = 1.55 V (typ.) @ IC = 40 A
- Minimized tail current
- Tight parameter distribution
- Positive VCE(sat) temperature coefficient
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EDA符号、封装和3D模型
STMicroelectronics - STG40H65FB2D7
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符号
封装
3D模型
样片和购买
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| 产品型号 | Order from distributors | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度（ºC） | Country of Origin | Budgetary Price (US$)*/Qty | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | |||||||||||
| STG40H65FB2D7 | 无法联系到经销商，请联系我们的销售办事处 | 批量生产 | EAR99 | NEC | Not Applicable | D.SCRIB.100% VI STAT | -55 | 175 | CHINA | | ||
无法联系到经销商，请联系我们的销售办事处
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