STG50M65F2D7 - 650 V, 50 A trench gate field-stop M series low-loss IGBT die in D7 packing - STMicroelectronics

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This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive V_CE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.

主要特性
- 6 µs of short-circuit withstand time
- Low V_CE(sat) = 1.65 V (typ.) @ I_C = 50 A
- Positive V_CE(sat) temperature coefficient
- Tight parameter distribution
- Maximum junction temperature: T_J = 175 °C
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样片和购买

产品型号	包装类型	供货状态	ECCN (US)	Country of Origin	从分销商订购	从ST订购
STG50M65F2D7	Not Applicable	批⁠量⁠生⁠产	EAR99	CHINA	没有经销商，请联系我们的销售办事处

STG50M65F2D7

包装类型

Not Applicable

供货状态

批⁠量⁠生⁠产

(*) 建议转售单价（美元）仅用于预算用途。如需以当地货币计价的报价，请联系您当地的 ST销售办事处或我们的经销商。

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技术文档

产品规格
- 描述版本文档大小操作
  
  DS12311
  650 V, 50 A trench gate field-stop M series low-loss IGBT die in D7 packing 1.0
  428.4 KB
  PDF
  
  DS12311
  
  650 V, 50 A trench gate field-stop M series low-loss IGBT die in D7 packing
  
  PDF

出版刊物和宣传资料

宣传册
- 描述版本文档大小操作
  
  ST IGBT Finder, get the right IGBT for your application with a touch of your screen 1.0
  357.76 KB
  PDF
  
  ST IGBT Finder, get the right IGBT for your application with a touch of your screen
  
  PDF

产品型号	供货状态	等级规格	材料声明**
STG50M65F2D7	批量生产	Industrial	PDF XML

STG50M65F2D7

Package:

Industrial

Material Declaration**:

(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系销售支持。