产品概述
描述
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.-
所有功能
- 6 µs of short-circuit withstand time
- Low VCE(sat) = 1.65 V (typ.) @ IC = 50 A
- Positive VCE(sat) temperature coefficient
- Tight parameter distribution
- Maximum junction temperature: TJ = 175 °C
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EDA符号、封装和3D模型
STMicroelectronics - STG50M65F2D7
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符号
封装
3D模型
样片和购买
| 产品型号 | 从分销商订购 | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度（ºC） | Country of Origin | Budgetary Price (US$)*/Qty | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | |||||||||||
| STG50M65F2D7 | 无法联系到经销商，请联系我们的销售办事处 | 批量生产 | EAR99 | NEC | Not Applicable | D.SCRIB.100% VI STAT | -55 | 175 | ITALY | | ||