STG80H65FBD7

批量生产

650 V, 80 A trench gate field-stop HB series high-speed IGBT die in D7 packing

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样片和购买
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质量与可靠性
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  • This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

    主要特性

    • Maximum junction temperature: TJ = 175 °C
    • High-speed switching series
    • Minimized tail current
    • VCE(sat) = 1.6 V (typ.) @ IC = 80 A
    • Tight parameter distribution
    • Safer paralleling
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技术文档

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      DS12372
      650 V, 80 A trench gate field-stop HB series high-speed IGBT die in D7 packing
      1.0
      443.38 KB
      PDF
      DS12372

      650 V, 80 A trench gate field-stop HB series high-speed IGBT die in D7 packing

出版刊物和宣传资料

    • 描述 版本 文档大小 操作
      ST IGBT FINDER app for Android and iOS 1.0
      787.04 KB
      PDF

      ST IGBT FINDER app for Android and iOS

质量与可靠性

产品型号 Marketing Status 等级规格 材料声明**
STG80H65FBD7
批量生产
工业

STG80H65FBD7

Package:

Industrial

Material Declaration**:

PDF XML

Marketing Status

批量生产

Grade

Industrial

(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此,它们可能不是100%适用于特定的设备。有关特定设备的信息,请联系 销售支持

样片和购买

产品型号
从分销商订购
从ST订购
供货状态
ECCN (US)
ECCN (EU)
包装类型
封装
温度(ºC) Country of Origin
Budgetary Price (US$)*/Qty
最小值
最大值
STG80H65FBD7 没有经销商,请联系我们的销售办事处
批量生产
EAR99 NEC Not Applicable D.SCRIB.100% VI STAT - - ITALY

STG80H65FBD7

供货状态

批量生产

ECCN (US)

EAR99

ECCN (EU)

NEC

包装类型

Not Applicable

封装

D.SCRIB.100% VI STAT

Operating Temperature (°C)

(最小值)

-

(最大值)

-

Country of Origin

ITALY

(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商