STGB10M65DF2

批量生产

Trench gate field-stop IGBT M series, 650 V 10 A low loss

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  • This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.

    主要特性

    • 6 µs of short-circuit withstand time
    • VCE(sat) = 1.55 V (typ.) @ IC = 10 A
    • Tight parameter distribution
    • Safer paralleling
    • Positive VCE(sat) temperature coefficient
    • Low thermal resistance
    • Soft and very fast recovery antiparallel diode
    • Maximum junction temperature: TJ = 175 °C

样片和购买

产品型号
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包装类型
供货状态
ECCN (US)
Country of Origin
一般描述
Approximate Price (US$)* / Qty
从ST订购
从分销商订购
STGB10M65DF2 D2PAK Tape And Reel
批⁠量⁠生⁠产
EAR99 CHINA Trench gate field-stop IGBT M series, 650 V 10 A low loss 1.56 / 1k 立即购买 没有经销商,请联系我们的销售办事处

STGB10M65DF2

封装

D2PAK

包装类型

Tape And Reel

Approximate Price (US$)* / Qty

1.56 / 1k

供货状态

批⁠量⁠生⁠产

Budgetary Price (US$)* / Qty

1.56 / 1k

ECCN (US)

EAR99

Country of Origin

CHINA

一般描述

Trench gate field-stop IGBT M series, 650 V 10 A low loss

(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商

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产品型号 供货状态 一般描述 封装 等级规格 符合RoHS级别 材料声明**
STGB10M65DF2
批量生产
Trench gate field-stop IGBT M series, 650 V 10 A low loss D2PAK Industrial Ecopack2

STGB10M65DF2

Package:

Trench gate field-stop IGBT M series, 650 V 10 A low loss

Material Declaration**:

Marketing Status

批量生产

General Description

Trench gate field-stop IGBT M series, 650 V 10 A low loss

Package

D2PAK

Grade

Industrial

(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此,它们可能不是100%适用于特定的设备。有关特定设备的信息,请联系 销售支持

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