This IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-off between switching performance and low on-state behavior.
- Low on-voltage drop (VCE(sat))
- Very soft ultra fast recovery antiparallel diode
- Low CRES / CIES ratio (no cross-conduction susceptibility)
|Very fast "H" series||D2PAK||工业||Ecopack2|
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