These devices are very fast IGBTs developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior.
- Low on voltage drop (VCE(sat))
- Low Cres / Cies ratio (no cross-conduction susceptibility)
- Very soft ultrafast recovery antiparallel diode
- Short-circuit withstand time 10 μs
|14 A, 600 V short-circuit rugged IGBT||D2PAK||工业||Ecopack2||
Package:14 A, 600 V short-circuit rugged IGBT
14 A, 600 V short-circuit rugged IGBT
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