This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.
- High short-circuit withstand time
- VCE(sat) = 1.55 V (typ.) @ IC = 20 A
- Tight parameters distribution
- Safer paralleling
- Low thermal resistance
- Soft and very fast recovery antiparallel diode
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|型号||Marketing Status||General Description||Package||Grade||RoHS Compliance Grade||Material Declaration**|
|Trench gate field-stop IGBT M series, 650 V 20 A low loss||D2PAK||工业||Ecopack2||
Package:Trench gate field-stop IGBT M series, 650 V 20 A low loss
Trench gate field-stop IGBT M series, 650 V 20 A low loss
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