产品概述

描述

This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the "V" series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive V_CE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.

所有功能
Maximum junction temperature: T_J= 175 °C

Very high speed switching series

Tail-less switching off

Low saturation voltage: V_CE(sat)= 1.8 V (typ.) @ I_C= 20 A

Tight parameters distribution

Safe paralleling

Low thermal resistance

Lead free package
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1200 V IGBT M series

Optimized for hard-switching applications up to 20 kHz

Watch the video (04:34)

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	产品型号	状态	描述	类型	供应商
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