产品概述
描述
This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the "V" series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.-
所有功能
- Maximum junction temperature: TJ= 175 °C
- Very high speed switching series
- Tail-less switching off
- Low saturation voltage: VCE(sat)= 1.8 V (typ.) @ IC= 20 A
- Tight parameters distribution
- Safe paralleling
- Low thermal resistance
- Lead free package
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All tools & software
EDA符号、封装和3D模型
全部资源
Resource title | 版本 | Latest update |
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SPICE models (1)
Resource title | 版本 | Latest update | ||
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ZIP | 1.0 | 11 Dec 2020 | 11 Dec 2020 |
质量与可靠性
产品型号 | Marketing Status | 一般描述 | 封装 | 等级规格 | 符合RoHS级别 | 材料声明** |
---|---|---|---|---|---|---|
STGB20V60F | NRND | Trench gate field-stop IGBT, V series 600 V, 20 A very high speed | D2PAK | 工业 | Ecopack2 | |
STGB20V60F
Package:
Trench gate field-stop IGBT, V series 600 V, 20 A very high speedMaterial Declaration**:
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此,它们可能不是100%适用于特定的设备。有关特定设备的信息,请联系 销售支持。
样片和购买
产品型号 | Order from distributors | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度(ºC) | Country of Origin | 一般描述 | Budgetary Price (US$)*/Qty | Country of Origin | 一般描述 | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
最小值 | 最大值 | ||||||||||||||
STGB20V60F | 1 distributors | NRND | EAR99 | NEC | Tape and Reel | D2PAK | -55 | 175 | CHINA | Trench gate field-stop IGBT, V series 600 V, 20 A very high speed | | CHINA | Trench gate field-stop IGBT, V series 600 V, 20 A very high speed |