This device utilizes the advanced PowerMESH™ process for the IGBT and the Turbo 2 Ultrafast high voltage technology for the diode. The combination results in a very good trade-off between conduction losses and switching behavior rendering the product ideal for diverse high voltage applications operating at high frequencies.
- Designed for automotive applications and AEC-Q101 qualified
- Low on-voltage drop (VCE(sat))
- Low Cres/ Cies ratio (no cross conduction susceptibility)
- Switching losses include diode recovery energy
- Short-circuit rated
- Very soft Ultrafast recovery anti-parallel diode
|Automotive-grade 10 A, 600 V short-circuit rugged IGBT with Ultrafast diode||DPAK||汽车||Ecopack1|
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