产品概述
描述
This application-specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gate-emitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automotive ignition systems.-
所有功能
- AEC-Q101 qualified
- 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH
- ESD gate-emitter protection
- Gate-collector high voltage clamping
- Logic level gate drive
- Low saturation voltage
- High pulsed current capability
- Gate and gate-emitter resistor
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EDA符号、封装和3D模型
全部资源
Resource title | 版本 | Latest update |
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SPICE models (1)
Resource title | 版本 | Latest update | ||
---|---|---|---|---|
ZIP | 1.0 | 27 Jul 2015 | 27 Jul 2015 |
样片和购买
产品型号 | Order from distributors | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度(ºC) | Eoff (mJ) (typ) (@ Tc=125°C) | PTOT (W) (max) | Country of Origin | Budgetary Price (US$)*/Qty | E<sub>off</sub> (mJ) (typ) (@ T<sub>c</sub>=125°C) | P<sub>TOT</sub> (W) (max) | Country of Origin | ||
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最小值 | 最大值 | ||||||||||||||||
STGD19N40LZ | 无法联系到经销商,请联系我们的销售办事处 | 批量生产 | EAR99 | NEC | Tape and Reel | DPAK | -55 | 175 | - | 125 | CHINA | | - | 125 | CHINA |
无法联系到经销商,请联系我们的销售办事处