These devices are based on a new advanced planar technology concept to yield an IGBT with more stable switching performance (Eoff) versus temperature, as well as lower conduction losses.
- Minimal tail current
- Low conduction and switching losses
- Ultrafast soft recovery antiparallel diode
|型号||Marketing Status||General Description||Package||Grade||RoHS Compliance Grade||Material Declaration**|
|4.5 A, 600 V very fast IGBT with Ultrafast diode||DPAK||工业||Ecopack2||
Package:4.5 A, 600 V very fast IGBT with Ultrafast diode
4.5 A, 600 V very fast IGBT with Ultrafast diode
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.