产品概述
描述
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. This device is part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
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所有功能
- Maximum junction temperature: TJ = 175 °C
- Low VCE(sat) = 1.6 V (typ.) @ IC = 4 A
- Tight parameter distribution
- Low thermal resistance
- Short-circuit rated
- Soft and fast recovery antiparallel diode
EDA符号、封装和3D模型
STMicroelectronics - STGD4H60DF
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符号
封装
3D模型
全部资源
| 资源标题 | 版本 | 更新时间 |
|---|
SPICE models (1)
| 资源标题 | 版本 | 更新时间 | ||
|---|---|---|---|---|
| ZIP | 1.0 | 20 Jan 2022 | 20 Jan 2022 |
质量与可靠性
| 产品型号 | Marketing Status | 一般描述 | 封装 | 等级规格 | 符合RoHS级别 | 材料声明** |
|---|---|---|---|---|---|---|
| STGD4H60DF | 批量生产 | Trench gate field-stop 600 V, 4 A high speed H series IGBT in a DPAK package | DPAK | 工业 | Ecopack2 |
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持。
样片和购买
| 产品型号 | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | 封装 | 包装类型 | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | 温度（ºC） | 一般描述 | Operating Temperature (°C) (min) | 一般描述 | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | |||||||||||||||
| STGD4H60DF | | | distributors 无法联系到经销商，请联系我们的销售办事处 | DPAK | Tape and Reel | CHINA | EAR99 | NEC | -55 | 175 | Trench gate field-stop 600 V, 4 A high speed H series IGBT in a DPAK package | -55 | Trench gate field-stop 600 V, 4 A high speed H series IGBT in a DPAK package | |||
STGD4H60DF 批量生产