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This device is a very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. This device is well-suited for resonant or soft-switching applications.
主要特性
- Low on-voltage drop (VCE(sat))
- Low CRES / CIES ratio (no cross-conduction susceptibility)
- Very soft ultra fast recovery antiparallel diode
- High frequency operation
精选 视频
All tools & software
All resources
产品规格 (1)
| Resource title | Latest update | |||
|---|---|---|---|---|
| 05 Dec 2018 |
05 Dec 2018
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应用手册 (2)
| Resource title | Latest update | |||
|---|---|---|---|---|
| 03 Apr 2020 |
03 Apr 2020
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| 13 Sep 2018 |
13 Sep 2018
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宣传册 (2)
| Resource title | Latest update | |||
|---|---|---|---|---|
| 13 Nov 2020 |
13 Nov 2020
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| 04 May 2020 |
04 May 2020
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EDA Symbols, Footprints and 3D Models
STMicroelectronics - STGD6NC60HDT4
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Symbols
Footprints
3D models
质量与可靠性
| 产品型号 | Marketing Status | 一般描述 | 封装 | 等级规格 | 符合RoHS级别 | 材料声明** |
|---|---|---|---|---|---|---|
| STGD6NC60HDT4 |
批量生产
|
N-channel 600 V, 7 A very fast IGBT | DPAK | 工业 | Ecopack2 |
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持 。
样片和购买
| 产品型号 | 从分销商订购 | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度（ºC） | Country of Origin | 一般描述 | Budgetary Price (US$)*/Qty | 更多信息 | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | |||||||||||||
| STGD6NC60HDT4 | 4 distributors | Buy Direct |
批量生产
|
EAR99 | NEC | Tape And Reel | DPAK | -55 | 150 | CHINA | N-channel 600 V, 7 A very fast IGBT | 0.504 / 1k | ||
