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This device is a very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. This device is well-suited for resonant or soft-switching applications.
主要特性
- Low on-voltage drop (VCE(sat))
- Low CRES / CIES ratio (no cross-conduction susceptibility)
- Very soft ultra fast recovery antiparallel diode
- High frequency operation
样片和购买
| 型号 | Package | Packing Type | Marketing Status | Budgetary Price (US$)* | Quantity | ECCN (US) | Country of Origin | General Description | Order from Distributors | Order from ST |
|---|---|---|---|---|---|---|---|---|---|---|
| STGD6NC60HDT4 | DPAK | Tape And Reel |
Active
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0.504 | 1000 | EAR99 | CHINA | N-channel 600 V, 7 A very fast IGBT | Check Availability | Buy now |
(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors
精选 视频
开发工具硬件
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Picture Part number 制造商 Description ST-IGBT-FINDER ST IGBT product finder application for Android and iOS 型号IGBT product finder application for Android and iOS
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| 型号 | Marketing Status | General Description | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|---|---|
| STGD6NC60HDT4 |
Active
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N-channel 600 V, 7 A very fast IGBT | DPAK | 工业 | Ecopack2 |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
