Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “S” identifies a family optimized to achieve very low VCE(sat) (@ max frequency of 1KHz).
- High input impedance (voltage driven)
- Off losses include tail current
- Low on-voltage drop (Vcesat)
- High current capability
- Low gate charge
|N-channel 600 V, 150 A, low drop IGBT||ISOTOP||工业||Ecopack2|
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.