This IGBT utilizes the advanced Power MESH™ process featuring extremely low on-state voltage drop in low-frequency working conditions (up to 1 kHz).
- Low on-voltage drop (VCE(sat))
- High current capability
- Very soft ultra fast recovery antiparallel diode
|型号||Marketing Status||General Description||Package||Grade||RoHS Compliance Grade||Material Declaration**|
|16 A, 600 V low drop IGBT with soft and fast recovery diode||TO-220FP||工业||Ecopack2|
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