This IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-off between switching performance and low on-state behavior.
- Lower on voltage drop (VCE(sat))
- Very soft ultra fast recovery antiparallel diode
- Lower CRES / CIES ratio (no cross-conduction susceptibility)
- Short-circuit withstand time 10μs
|6 A, 600 V short-circuit rugged IGBT in a TO-220FP package||TO-220FP||工业||Ecopack2||
Package:6 A, 600 V short-circuit rugged IGBT in a TO-220FP package
6 A, 600 V short-circuit rugged IGBT in a TO-220FP package
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.